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| BAS 170W Silicon Schottky Diode lGeneral-purpose diodes for high-speed switching lCircuit protection lVoltage clamping lHigh-level detecting and mixing lSmall package SOD-323 ESD: Electrostastic discharge sensitive device, observe handling precautions! Type BAS 170W Marking 7 Ordering Code (tape and reel) Q62702-A1072 Pin Configuration Package 1 2 A C SOD-323 1) Maximum Ratings Parameter Reverse voltage Forward current Surge forward current, t 10 ms Total Power dissipation TS 97C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient 1) Symbol BAS 170W 70 70 100 250 -55 +150C -55...+150C Unit V mA mA mW C C VR IF IFSM Ptot Top Tstg Junction-soldering point Rth JA Rth JS 320 210 K/W K/W _________________________________ 1) Package mounted on an epoxy pcb 40mm x 40mm x 1.5mm/1cm2 Cu Semiconductor Group 1 Edition A01, 11.07.94 BAS 170W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC Characteristics Breakdown voltage I(BR) = 10 A Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 50 V V(BR) 70 375 705 880 1.5 34 2 - V mV 300 600 750 410 750 1000 A 0.1 10 pF 2 ps 100 nH - VF IR VR = 70 V Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance IF = 10 mA, f = 10 kHz Series inductance CT I RF LS Semiconductor Group 2 Edition A01, 11.07.94 BAS 170W Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) Differential forward resistance RF = f (IF) Semiconductor Group 3 Edition A01, 11.07.94 BAS 170W Forward current IF = f (TA *TS) * Package mounted on epoxy Permissible load RthJS = f (tp) mA K/W TS IF TA R thJS TS TA tp Permissible Pulse load IFmax / IFDC= f (tp) I Fmax _____ I FDC tp Semiconductor Group 4 Edition A01, 11.07.94 |
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